GaAs Gallium Arsenide Solar Cell with up to 30% conversion efficiency
- $450.00 / >=5 pieces
- 5 pieces
- Shanghai Fullsuns Energy Technology Co., Ltd.
- Shanghai, China
- Mr TOMMY TANG
PRODUCT DETAIL
| Weight: | (125±12)mg/square cm; | Place of Origin: | China; |
| Size: | 30*40 mm; | Packaging Detail: | Standard package or according to requirement (GaAs Gallium Arsenide Solar Cell with up to 30% conversion efficiency); |
| Material: | GaInP2/GaAs/GeGe; | Product name: | GaAs Gallium Arsenide Solar Cell with up to 30% conversion efficiency; |
| Payment Terms: | T/T,Western Union,MoneyGram; | Port: | Shanghai China; |
| Supply Ability: | 1000 Pieces per Month; | Thickness: | 0.36±0.02 mm; |
| Glass Cover type: | KFB120; |
GaAs Gallium Arsenide Solar Cell with up to 30% conversion efficiency
Features
The triple junction gallium arsenide solar cell is made of tantalum as a substrate, and is formed by three N/P sub-cells connected in series through a tantalum-through junction, with separate silicon diodes, interconnecting sheets, and glass cover sheets. It has high efficiency and strong radiation resistance.
Application Field
Low-altitude aircraft, medium-orbit aircraft, high-altitude aircraft (nano-satellite, small satellite, commercial satellite, large satellite, drone, etc.)
Product Overviews
Basic Information
- Material: Triple Junction Gallium Arsenide, GaInP2/GaAs/GeGe
- Cell Size: (30.15±0.05)mm*(40.15±0.05)mm
- Cell Area: 11.46 cm2
- Thickness: 0.36±0.02 mm
- Weight: (125±12) mg/cm2
- Anti-Relection film: TiOx/Al2O3
- Glass Cover: KFB120
- Cover Thickness: 120±20μm
- Interconnect sheet material: Silver/Kovar Silver
- Interconnect sheet thickness: 20/25μm
Electrical performance data(AM0, 1SUN, 1353w/m2, 25℃)
- Average open circuit voltage Voc(mV): 2740
- Average short circuit current density Joc(mA/cm2): 17.4
- Maximum power voltage Vm(mV): 2430
- Maximum power current density Joc(mA/cm2): 16.7
- Average conversion efficiency ηbare: 30%
- Fill Factor: 0.850
Irradiation intensity: (AM0, 1SUN, 1353w/m2, 25℃)
| Irradiation Intensity | 1*1014e/cm2 | 5*1014e/cm2 | 1*1015e/cm2 |
| Im/Imo | 0.99 | 0.97 | 0.94 |
| Vm/Vmo | 0.96 | 0.93 | 0.92 |
| Pm/Pmo | 0.95 | 0.90 | 0.86 |
Design Parameters
- Voltage VI(mV): 2350
- Average current LI ave(mA): 500
- Minimum current LI min(mA): 200
Diode Protection
- Vforward(620mA)≤1.0V;
- Ireverse(4.0V)≤50μA
Other Parameters
- Absorption coefficient≤0.92;
- Withstand tensile force ≥0.83N/mm2
Temperature Coefficient
+
| Irradiation intensity | BOL | 1MeV,5*1014e/cm2 | 1mev,1*1015e/cm2 |
| Jsc(μA/cm2/C) | 11.0 | 10.0 | 13.0 |
| Voc(mV/ C) | -5.9 | -6.1 | -6.3 |
| Jm(μA/cm2/C) | 9.0 | 9.5 | 15.0 |
| Vm(mV/ C) | -6.0 | -6.2 | -6.5 |
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